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1. Shiv Bhushan,Santunu Sarangi,Abirmoya Santra,Mirgendra Kumar,Sarvesh Dubey,S.Jit and P.K.Tiwari, "An Analytical Surface Potential Model For Strained-Si on Silicon Germanium MosFet Including The Effects of Interface Charge " Journal of Electron Devices (France) ,vol.15, pp.1285-1290, 2012.

2. Shiv Bhushan, Santunu Sarangi, Abirmoya Santra, Gopi Krishna S. and P.K.Tiwari, " An Analytical Model for the Threshold Voltage of Short-Channel Double-Material-Gate (DMG) MOSFETs with a Strained-Si (s-Si) Channel on SiGe Substrates",Journal of Semiconductor Technology and Science Vol 13 No. 4 Aug. 2013

3. Santunu Sarangi, Shiv Bhushan, Abirmoya Santra, Sarvesh Dubey, S. Jit and Pramod Kumar Tiwari,"A rigorous simulation based study of gate misalignment effects in gate engineered double-gate (DG) MOSFETs", Journal of superlattices-and-microstructures, Elsevier (60) 2013, PP 263-279

4. Abirmoya Santra, Santunu Sarangi, Shiv Bhushan, Gopi Krishna S., Sarvesh Dubey, S. Jit and Pramod Kumar Tiwari,"An Analytical Threshold Voltage Model for Triple-Material Cylindrical Gate-All-Around (TM-CGAA) MOSFETs" IEEE Transaction on Nanotechnology, (Communicated).

5. Gopi Krishna S., Santunu Sarangi,  Shiv Bhushan, Abirmoya Santra and Pramod Kumar Tiwari, "An analytical threshold voltage model for a short-channel dual-metal-gate(DMG) fully depleted recessed- source/drain (Re-S/D) SOI MOSFET", Journal of Solid State Electronics, Elsevier, (In Press).